| PART |
Description |
Maker |
| SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
| SPP04N80C3 SPP04N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB17N80C3 SPB17N80C307 |
CoolMOS庐 Power Transistor Features new revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP02N60C3 SPP02N60C307 SPP02N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| SPN03N60S5 SPN03N60S505 |
New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
|
Infineon Technologies AG
|
| SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPS02N60C3 SPS02N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPB21N50C3 SPB21N50C305 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPI07N65C3 SPA07N65C3 SPP07N65C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPP08N80C308 SPP08N80C3-08 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| IPB60R120C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
